| PART |
Description |
Maker |
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| BFR540 BFR540_4 BFR540/T1 BFR540-2015 |
NPN 9 GHz wideband transistor
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND
|
Quanzhou Jinmei Electronic ...
Philips
|
| PHT41435B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| AT-64020 |
Up to 4 GHz Linear Power Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| PHL516-10 |
Wireless Bipolar Power Transistor, 1OW 1.45 - 1.60 GHz
|
Tyco Electronics
|
| AT-64020 |
Up to 4 GHz Linear Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-42035 AT-42035G |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
|
| PHT41410B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
